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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistors DESCRIPTION *DC Current Gain -hFE = 750(Min)@ IC= -1.5A *Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF *Complement to Type BDT61F/61AF/61BF/61CF APPLICATIONS *Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER BDT60F Collector-Base Voltage BDT60AF BDT60BF BDT60CF BDT60F Collector-Emitter Voltage BDT60AF BDT60BF BDT60CF VEBO IC ICM IB B BDT60F/AF/BF/CF VALUE -60 -80 UNIT VCBO V -100 -120 -60 -80 V -100 -120 -5 -4 -6 -0.1 25 150 -65~150 V A A A W VCEO Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current Collector Power Dissipation TC=25 Junction Temperature Storage Ttemperature Range PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 5 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER BDT60F BDT60AF IC= -30mA; IB= 0 BDT60BF BDT60CF VCE(sat) VBE(on) ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 VECF-1 VECF-2 Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain C-E Diode Forward Voltage C-E Diode Forward Voltage IC= -1.5A; IB= -6mA B BDT60F/AF/BF/CF CONDITIONS MIN -60 -80 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V -100 -120 -2.5 -2.5 -0.2 -1 -0.2 -5 2000 750 250 2 2.1 V V V V mA mA mA IC= -1.5A ; VCE= -3V VCB= -30V; IE= 0 VCB= 1/2VCBO; IE= 0; TJ=150 VCE= 1/2VCEO; IB= 0 VEB= -5V; IC= 0 IC= -0.5A ; VCE= -3V IC= -1.5A ; VCE= -3V IC= -4A ; VCE= -3V IF= 1.5A IF= 4A Switching Times ton toff Turn-On Time IC= -1.5A; IB1= -IB2= -6mA Turn-Off Time 1.5 5.0 s 0.3 1.5 s isc Websitewww.iscsemi.cn |
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